IXFT20N100P - IXYS

Part Number	IXFT20N100P
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	1000V
Current - Continuous Drain (Id) @ 25°C	20A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	6.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	126nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	7300pF @ 25V
Vgs (Max)	±30V
FET Feature	-
Power Dissipation (Max)	660W (Tc)
Rds On (Max) @ Id, Vgs	570 mOhm @ 10A, 10V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-268
Package / Case	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Weight	-
Country of Origin	-

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