IXFT12N100

IXFT12N100 - IXYS

Part Number
IXFT12N100
Manufacturer
IXYS
Brief Description
MOSFET N-CH 1000V 12A TO-268
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
IXFT12N100 PDF online browsing
Datasheet PDF Download
-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
1704 pcs
Reference Price
USD 15.4863/pcs
Our Price
Send by email: [email protected]

Please fill the below form to request a quotation for IXFT12N100

IXFT12N100 Detailed Description

Part Number IXFT12N100
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 155nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 4000pF @ 25V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 300W (Tc)
Rds On (Max) @ Id, Vgs 1.05 Ohm @ 6A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-268
Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Weight -
Country of Origin -

RELATED PRODUCTS FOR IXFT12N100