IXFH60N65X2-4 - IXYS

Part Number	IXFH60N65X2-4
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	52 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id	5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs	108nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	6300pF @ 25V
FET Feature	-
Power Dissipation (Max)	780W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247-4L
Package / Case	TO-247-4
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
IXFH60N20	IXYS	MOSFET N-CH 200V 60A TO-247	Details
IXFH60N25Q	IXYS	MOSFET N-CH 250V 60A TO-247AD	Details
IXFH60N50P3	IXYS	MOSFET N-CH 500V 60A TO247	Details
IXFH60N60X	IXYS	MOSFET N-CH 600V 60A TO247	Details
IXFH60N65X2	IXYS	MOSFET N-CH 650V 60A TO-247	Details
IXFH60N65X2-4	IXYS	MOSFET N-CH	Details
IXFH66N20Q	IXYS	MOSFET N-CH 200V 66A TO-247	Details
IXFH67N10	IXYS	MOSFET N-CH 100V 67A TO-247AD	Details
IXFH67N10Q	IXYS	MOSFET N-CH TO-247AD	Details
IXFH69N30P	IXYS	MOSFET N-CH 300V 69A TO-247	Details