IXFH60N65X2 - IXYS

Part Number	IXFH60N65X2
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	5.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs	107nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	6180pF @ 25V
Vgs (Max)	±30V
FET Feature	-
Power Dissipation (Max)	780W (Tc)
Rds On (Max) @ Id, Vgs	52 mOhm @ 30A, 10V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	-
Package / Case	TO-247-3
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
IXFH100N25P	IXYS	MOSFET N-CH 250V 100A TO-247	Details
IXFH100N30X3	IXYS	300V/100A ULTRA JUNCTION X3-CLAS	Details
IXFH102N15T	IXYS	MOSFET N-CH 150V 102A TO-247	Details
IXFH10N100	IXYS	MOSFET N-CH 1KV 10A TO-247AD	Details
IXFH10N100P	IXYS	MOSFET N-CH 1KV 10A TO-247AD	Details
IXFH10N100Q	IXYS	MOSFET N-CH 1000V 10A TO-247AD	Details
IXFH10N80P	IXYS	MOSFET N-CH 800V 10A TO-247	Details
IXFH10N90	IXYS	MOSFET N-CH 900V 10A TO-247AD	Details
IXFH110N10P	IXYS	MOSFET N-CH 100V 110A TO-247	Details
IXFH110N15T2	IXYS	MOSFET N-CH 150V 110A TO-247	Details