IXFH66N20Q - IXYS

Part Number	IXFH66N20Q
Part Status	Last Time Buy
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25°C	66A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs	105nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	3700pF @ 25V
Vgs (Max)	±30V
FET Feature	-
Power Dissipation (Max)	400W (Tc)
Rds On (Max) @ Id, Vgs	40 mOhm @ 33A, 10V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247AD (IXFH)
Package / Case	TO-247-3
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
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IXFH10N100P	IXYS	MOSFET N-CH 1KV 10A TO-247AD	Details
IXFH10N100Q	IXYS	MOSFET N-CH 1000V 10A TO-247AD	Details
IXFH10N80P	IXYS	MOSFET N-CH 800V 10A TO-247	Details
IXFH10N90	IXYS	MOSFET N-CH 900V 10A TO-247AD	Details
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IXFH110N15T2	IXYS	MOSFET N-CH 150V 110A TO-247	Details