IXFH66N20Q

IXFH66N20Q - IXYS

Part Number
IXFH66N20Q
Manufacturer
IXYS
Brief Description
MOSFET N-CH 200V 66A TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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IXFH66N20Q PDF online browsing
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Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
2928 pcs
Reference Price
USD 9.178/pcs
Our Price
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IXFH66N20Q Detailed Description

Part Number IXFH66N20Q
Part Status Last Time Buy
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 66A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 105nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 3700pF @ 25V
Vgs (Max) ±30V
FET Feature -
Power Dissipation (Max) 400W (Tc)
Rds On (Max) @ Id, Vgs 40 mOhm @ 33A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247AD (IXFH)
Package / Case TO-247-3
Weight -
Country of Origin -

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