SPW11N60C3

SPW11N60C3 - Infineon Technologies

Part Number
SPW11N60C3
Manufacturer
Infineon Technologies
Brief Description
MOSFET N-CH 650V 11A TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
SPW11N60C3 PDF online browsing
Datasheet PDF Download
-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
705 pcs
Reference Price
USD 3.63/pcs
Our Price
Send by email: [email protected]

Please fill the below form to request a quotation for SPW11N60C3

SPW11N60C3 Detailed Description

Part Number SPW11N60C3
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 11A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 3.9V @ 500µA
Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 25V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 125W (Tc)
Rds On (Max) @ Id, Vgs 380 mOhm @ 7A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO247-3
Package / Case TO-247-3
Weight -
Country of Origin -

RELATED PRODUCTS FOR SPW11N60C3