SPW11N80C3

SPW11N80C3 - Infineon Technologies

Part Number
SPW11N80C3
Manufacturer
Infineon Technologies
Brief Description
MOSFET N-CH 800V 11A TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
SPW11N80C3 PDF online browsing
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-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
1965 pcs
Reference Price
USD 3.18/pcs
Our Price
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SPW11N80C3 Detailed Description

Part Number SPW11N80C3
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800V
Current - Continuous Drain (Id) @ 25°C 11A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 3.9V @ 680µA
Gate Charge (Qg) (Max) @ Vgs 85nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1600pF @ 100V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 156W (Tc)
Rds On (Max) @ Id, Vgs 450 mOhm @ 7.1A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO247-3
Package / Case TO-247-3
Weight -
Country of Origin -

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