| Part Number | SPB80P06PGATMA1 |
|---|---|
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 23 mOhm @ 64A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 5.5mA |
| Gate Charge (Qg) (Max) @ Vgs | 173nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 5033pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 340W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO263-3-2 |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
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SPB80N03S2-03 | Infineon Technologies | MOSFET N-CH 30V 80A D2PAK | Details |
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SPB80N03S203GATMA1 | Infineon Technologies | MOSFET N-CH 30V 80A D2PAK | Details |
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SPB80N03S2L-03 | Infineon Technologies | MOSFET N-CH 30V 80A D2PAK | Details |
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SPB80N03S2L-03 G | Infineon Technologies | MOSFET N-CH 30V 80A D2PAK | Details |
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SPB80N03S2L-04 | Infineon Technologies | MOSFET N-CH 30V 80A D2PAK | Details |
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SPB80N03S2L-04 G | Infineon Technologies | MOSFET N-CH 30V 80A D2PAK | Details |
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SPB80N03S2L-05 | Infineon Technologies | MOSFET N-CH 30V 80A D2PAK | Details |
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SPB80N03S2L-05 G | Infineon Technologies | MOSFET N-CH 30V 80A D2PAK | Details |
