SPB21N50C3

SPB21N50C3 - Infineon Technologies

Part Number
SPB21N50C3
Manufacturer
Infineon Technologies
Brief Description
MOSFET N-CH 560V 21A TO-263
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
SPB21N50C3 PDF online browsing
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Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
2500 pcs
Reference Price
USD 1.968/pcs
Our Price
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SPB21N50C3 Detailed Description

Part Number SPB21N50C3
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 560V
Current - Continuous Drain (Id) @ 25°C 21A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 3.9V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 95nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 2400pF @ 25V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 208W (Tc)
Rds On (Max) @ Id, Vgs 190 mOhm @ 13.1A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Weight -
Country of Origin -

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