SPB20N60C3ATMA1 - Infineon Technologies

Part Number	SPB20N60C3ATMA1
Part Status	Not For New Designs
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25°C	20.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	190 mOhm @ 13.1A, 10V
Vgs(th) (Max) @ Id	3.9V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	114nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2400pF @ 25V
FET Feature	-
Power Dissipation (Max)	208W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO263-3-2
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Weight	-
Country of Origin	-

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