SPB18P06PGATMA1 - Infineon Technologies

Part Number	SPB18P06PGATMA1
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	18.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	130 mOhm @ 13.2A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	28nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	860pF @ 25V
FET Feature	-
Power Dissipation (Max)	81.1W (Ta)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D²PAK (TO-263AB)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
SPB18P06P	Infineon Technologies	MOSFET P-CH 60V 18.7A D2PAK	Details
SPB18P06P G	Infineon Technologies	MOSFET P-CH 60V 18.7A TO-263	Details
SPB18P06PGATMA1	Infineon Technologies	MOSFET P-CH 60V 18.7A TO-263	Details