SPB18P06PGATMA1

SPB18P06PGATMA1 - Infineon Technologies

Part Number
SPB18P06PGATMA1
Manufacturer
Infineon Technologies
Brief Description
MOSFET P-CH 60V 18.7A TO-263
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
SPB18P06PGATMA1 PDF online browsing
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-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
283972 pcs
Reference Price
USD 0.57981/pcs
Our Price
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SPB18P06PGATMA1 Detailed Description

Part Number SPB18P06PGATMA1
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 18.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 130 mOhm @ 13.2A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 28nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 860pF @ 25V
FET Feature -
Power Dissipation (Max) 81.1W (Ta)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263AB)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Weight -
Country of Origin -

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