IPP60R090CFD7XKSA1 - Infineon Technologies

Part Number	IPP60R090CFD7XKSA1
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	90 mOhm @ 11.4A, 10V
Vgs(th) (Max) @ Id	4.5V @ 570µA
Gate Charge (Qg) (Max) @ Vgs	51nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2103pF @ 400V
FET Feature	-
Power Dissipation (Max)	125W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO220-3
Package / Case	TO-220-3
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
IPP60R040C7XKSA1	Infineon Technologies	MOSFET N-CH 600V 50A TO220-3	Details
IPP60R060C7XKSA1	Infineon Technologies	MOSFET N-CH 600V 35A TO220-3	Details
IPP60R060P7XKSA1	Infineon Technologies	HIGH POWER_NEW	Details
IPP60R070CFD7XKSA1	Infineon Technologies	MOSFET N-CH TO220-3	Details
IPP60R074C6XKSA1	Infineon Technologies	MOSFET N-CH 600V 57.7A TO220	Details
IPP60R080P7XKSA1	Infineon Technologies	HIGH POWER_NEW	Details
IPP60R090CFD7XKSA1	Infineon Technologies	HIGH POWERNEW	Details
IPP60R099C6	Infineon Technologies	MOSFET N-CH 600V 37.9A TO220	Details
IPP60R099C6XKSA1	Infineon Technologies	MOSFET N-CH 600V 37.9A TO220	Details
IPP60R099C7XKSA1	Infineon Technologies	MOSFET N-CH 600V 22A TO220-3	Details