IPP600N25N3 G - Infineon Technologies

Part Number	IPP600N25N3 G
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	250V
Current - Continuous Drain (Id) @ 25°C	25A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	4V @ 90µA
Gate Charge (Qg) (Max) @ Vgs	29nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	2350pF @ 100V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	136W (Tc)
Rds On (Max) @ Id, Vgs	60 mOhm @ 25A, 10V
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO220-3-1
Package / Case	TO-220-3
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
IPP600N25N3 G	Infineon Technologies	MOSFET N-CH 250V 25A TO220-3	Details
IPP600N25N3GXKSA1	Infineon Technologies	MOSFET N-CH 250V 25A TO220-3	Details
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IPP60R060C7XKSA1	Infineon Technologies	MOSFET N-CH 600V 35A TO220-3	Details
IPP60R060P7XKSA1	Infineon Technologies	HIGH POWER_NEW	Details
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IPP60R074C6XKSA1	Infineon Technologies	MOSFET N-CH 600V 57.7A TO220	Details
IPP60R080P7XKSA1	Infineon Technologies	HIGH POWER_NEW	Details
IPP60R090CFD7XKSA1	Infineon Technologies	HIGH POWERNEW	Details
IPP60R099C6	Infineon Technologies	MOSFET N-CH 600V 37.9A TO220	Details