IPP111N15N3GXKSA1 - Infineon Technologies

Part Number	IPP111N15N3GXKSA1
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	150V
Current - Continuous Drain (Id) @ 25°C	83A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	8V, 10V
Rds On (Max) @ Id, Vgs	11.1 mOhm @ 83A, 10V
Vgs(th) (Max) @ Id	4V @ 160µA
Gate Charge (Qg) (Max) @ Vgs	55nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3230pF @ 75V
FET Feature	-
Power Dissipation (Max)	214W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO220-3
Package / Case	TO-220-3
Weight	-
Country of Origin	-

Image	Part Number	Manufacturers	Description	View
	IPP111N15N3 G	Infineon Technologies	MOSFET N-CH 150V 83A TO220-3	Details
	IPP111N15N3GXKSA1	Infineon Technologies	MOSFET N-CH 150V 83A TO220-3	Details