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Home › Product Categories › Discrete Semiconductor › Transistors - FETs, MOSFETs - Single › IPB107N20NA
IPB107N20NA

IPB107N20NA - Infineon Technologies

Part Number
IPB107N20NA
Manufacturer
Infineon Technologies
Brief Description
MOSFET N-CH 200V 88A TO263-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
IPB107N20NA PDF online browsing
Datasheet PDF Download
-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
5000 pcs
Reference Price
USD 4.2277/pcs
Our Price
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IPB107N20NA Detailed Description

Part Number IPB107N20NA
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 88A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs 87nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 7100pF @ 100V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 300W (Tc)
Rds On (Max) @ Id, Vgs 10.7 mOhm @ 88A, 10V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Weight -
Country of Origin -

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