| Part Number | IPB100N04S4H2ATMA1 |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 70µA |
| Gate Charge (Qg) (Max) @ Vgs | 90nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 7180pF @ 25V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 115W (Tc) |
| Rds On (Max) @ Id, Vgs | 2.4 mOhm @ 100A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO263-3-2 |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
|
IPB100N04S204ATMA1 | Infineon Technologies | MOSFET N-CH 40V 100A TO263-3 | Details |
|
IPB100N04S204ATMA4 | Infineon Technologies | MOSFET N-CH 40V 100A TO263-3 | Details |
|
IPB100N04S2L03ATMA1 | Infineon Technologies | MOSFET N-CH 40V 100A TO263-3 | Details |
|
IPB100N04S2L03ATMA2 | Infineon Technologies | MOSFET N-CH 40V 100A TO263-3 | Details |
|
IPB100N04S3-03 | Infineon Technologies | MOSFET N-CH 40V 100A TO263-3 | Details |
|
IPB100N04S303ATMA1 | Infineon Technologies | MOSFET N-CH 40V 100A TO263-3 | Details |
|
IPB100N04S4H2ATMA1 | Infineon Technologies | MOSFET N-CH 40V 100A TO263-3-2 | Details |
|
IPB100N06S205ATMA1 | Infineon Technologies | MOSFET N-CH 55V 100A TO263-3 | Details |
|
IPB100N06S205ATMA4 | Infineon Technologies | MOSFET N-CH 55V 100A TO263-3 | Details |
|
IPB100N06S2L05ATMA1 | Infineon Technologies | MOSFET N-CH 55V 100A TO263-3 | Details |
