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Home › Product Categories › Discrete Semiconductor › Transistors - FETs, MOSFETs - Single › IPB100N04S2L03ATMA2
IPB100N04S2L03ATMA2

IPB100N04S2L03ATMA2 - Infineon Technologies

Part Number
IPB100N04S2L03ATMA2
Manufacturer
Infineon Technologies
Brief Description
MOSFET N-CH 40V 100A TO263-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
IPB100N04S2L03ATMA2 PDF online browsing
Datasheet PDF Download
IPB100N04S2L03ATMA2.pdf
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
17850 pcs
Reference Price
USD 1.4239/pcs
Our Price
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IPB100N04S2L03ATMA2 Detailed Description

Part Number IPB100N04S2L03ATMA2
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 4.5V, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 230nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 6000pF @ 25V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 300W (Tc)
Rds On (Max) @ Id, Vgs 3 mOhm @ 80A, 10V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Weight -
Country of Origin -

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