Part Number | IPB097N08N3 G |
---|---|
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 80V |
Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
Drive Voltage (Max Rds On,Min Rds On) | 6V, 10V |
Vgs(th) (Max) @ Id | 3.5V @ 46µA |
Gate Charge (Qg) (Max) @ Vgs | 35nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2410pF @ 40V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 100W (Tc) |
Rds On (Max) @ Id, Vgs | 9.7 mOhm @ 46A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO263-2 |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Weight | - |
Country of Origin | - |