IPB097N08N3 G

IPB097N08N3 G - Infineon Technologies

Part Number
IPB097N08N3 G
Manufacturer
Infineon Technologies
Brief Description
MOSFET N-CH 80V 70A TO263-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
3632 pcs
Reference Price
USD 0/pcs
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IPB097N08N3 G Detailed Description

Part Number IPB097N08N3 G
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80V
Current - Continuous Drain (Id) @ 25°C 70A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 6V, 10V
Vgs(th) (Max) @ Id 3.5V @ 46µA
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 2410pF @ 40V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 100W (Tc)
Rds On (Max) @ Id, Vgs 9.7 mOhm @ 46A, 10V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Weight -
Country of Origin -

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