| Part Number | IPB090N06N3 G |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 34µA |
| Gate Charge (Qg) (Max) @ Vgs | 36nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 2900pF @ 30V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 71W (Tc) |
| Rds On (Max) @ Id, Vgs | 9 mOhm @ 50A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO263-2 |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
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IPB090N06N3 G | Infineon Technologies | MOSFET N-CH 60V 50A TO263-3 | Details |
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IPB090N06N3GATMA1 | Infineon Technologies | MOSFET N-CH 60V 50A TO263-3 | Details |
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IPB093N04LGATMA1 | Infineon Technologies | MOSFET N-CH 40V 50A TO263-3 | Details |
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IPB096N03LAG | INFINEON | IPB096N03LAG INFINEON TO-263 New Original Stocks | Details |
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IPB096N03LG | I | IPB096N03LG I TO263 New Original Stocks | Details |
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IPB096N03LGATMA1 | Infineon Technologies | MOSFET N-CH 30V 35A TO-263-3 | Details |
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IPB097N08N3 G | Infineon Technologies | MOSFET N-CH 80V 70A TO263-3 | Details |
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IPB09N03LA | Infineon Technologies | MOSFET N-CH 25V 50A D2PAK | Details |
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IPB09N03LA G | Infineon Technologies | MOSFET N-CH 25V 50A D2PAK | Details |
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IPB09N03LAG | infineon | IPB09N03LAG infineon TO-263 New Original Stocks | Details |
