| Part Number | BSB013NE2LXI |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25°C | 36A (Ta), 163A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 62nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 4400pF @ 12V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 57W (Tc) |
| Rds On (Max) @ Id, Vgs | 1.3 mOhm @ 30A, 10V |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | MG-WDSON-2, CanPAK M™ |
| Package / Case | 3-WDSON |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
|
BSB008NE2LXXUMA1 | Infineon Technologies | MOSFET N-CH 25V 46A 2WDSON | Details |
|
BSB012N03LX3 G | Infineon Technologies | MOSFET N-CH 30V 180A 2WDSON | Details |
|
BSB012NE2LX | Infineon Technologies | MOSFET N-CH 25V 170A WDSON-2 | Details |
|
BSB012NE2LXIXUMA1 | Infineon Technologies | MOSFET N-CH 25V 170A WDSON | Details |
|
BSB013NE2LXI | Infineon Technologies | MOSFET N-CH 25V 163A WDSON-2 | Details |
|
BSB013NE2LXIXUMA1 | Infineon Technologies | MOSFET N-CH 25V 163A WDSON-2 | Details |
|
BSB014N04LX3 G | Infineon Technologies | MOSFET N-CH 40V 180A 2WDSON | Details |
|
BSB014N04LX3GXUMA1 | Infineon Technologies | MOSFET N-CH 40V 180A 2WDSON | Details |
|
BSB015N04NX3 G | Infineon Technologies | MOSFET N-CH 40V 180A 2WDSON | Details |
|
BSB015N04NX3GXUMA1 | Infineon Technologies | MOSFET N-CH 40V 180A 2WDSON | Details |
