BSB012NE2LXIXUMA1

BSB012NE2LXIXUMA1 - Infineon Technologies

Part Number
BSB012NE2LXIXUMA1
Manufacturer
Infineon Technologies
Brief Description
MOSFET N-CH 25V 170A WDSON
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
BSB012NE2LXIXUMA1 PDF online browsing
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-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
34061 pcs
Reference Price
USD 0.7722/pcs
Our Price
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BSB012NE2LXIXUMA1 Detailed Description

Part Number BSB012NE2LXIXUMA1
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25V
Current - Continuous Drain (Id) @ 25°C 170A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 4.5V, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 82nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 5852pF @ 12V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 2.8W (Ta), 57W (Tc)
Rds On (Max) @ Id, Vgs 1.2 mOhm @ 30A, 10V
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package MG-WDSON-2, CanPAK M™
Package / Case 3-WDSON
Weight -
Country of Origin -

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