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Home › Product Categories › Discrete Semiconductor › Transistors - IGBTs - Modules › GSID100A120T2P2
GSID100A120T2P2

GSID100A120T2P2 - Global Power Technologies Group

Part Number
GSID100A120T2P2
Manufacturer
Global Power Technologies Group
Brief Description
SILICON IGBT MODULES
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
GSID100A120T2P2 PDF online browsing
Datasheet PDF Download
GSID100A120T2P2.pdf
Category
Transistors - IGBTs - Modules
Delivery Time
1 Day
Date Code
New
Stock Quantity
185 pcs
Reference Price
USD 137.13/pcs
Our Price
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GSID100A120T2P2 Detailed Description

Part Number GSID100A120T2P2
Part Status Active
IGBT Type -
Configuration Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 200A
Power - Max 710W
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 100A
Current - Collector Cutoff (Max) 1mA
Input Capacitance (Cies) @ Vce 13.7nF @ 25V
Input Three Phase Bridge Rectifier
NTC Thermistor Yes
Operating Temperature -40°C ~ 150°C
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package Module
Weight -
Country of Origin -

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