| Part Number | GSID100A120T2P2 |
|---|---|
| Part Status | Active |
| IGBT Type | - |
| Configuration | Three Phase Inverter |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Current - Collector (Ic) (Max) | 200A |
| Power - Max | 710W |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 100A |
| Current - Collector Cutoff (Max) | 1mA |
| Input Capacitance (Cies) @ Vce | 13.7nF @ 25V |
| Input | Three Phase Bridge Rectifier |
| NTC Thermistor | Yes |
| Operating Temperature | -40°C ~ 150°C |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Supplier Device Package | Module |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
 |
GSID100A120S5C1 | Global Power Technologies Group | IGBT MODULE 1200V 170A | Details |
|
GSID100A120T2C1 | Global Power Technologies Group | SILICON IGBT MODULES | Details |
|
GSID100A120T2C1A | Global Power Technologies Group | SILICON IGBT MODULES | Details |
|
GSID100A120T2P2 | Global Power Technologies Group | SILICON IGBT MODULES | Details |
|
GSID150A120S3B1 | Global Power Technologies Group | SILICON IGBT MODULES | Details |
|
GSID150A120S5C1 | Global Power Technologies Group | IGBT MODULE 1200V 285A | Details |
|
GSID150A120S6A4 | Global Power Technologies Group | SILICON IGBT MODULES | Details |
|
GSID150A120T2C1 | Global Power Technologies Group | SILICON IGBT MODULES | Details |
