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Home › Product Categories › Discrete Semiconductor › Transistors - FETs, MOSFETs - Single › GA10JT12-263
GA10JT12-263

GA10JT12-263 - GeneSiC Semiconductor

Part Number
GA10JT12-263
Manufacturer
GeneSiC Semiconductor
Brief Description
TRANS SJT 1200V 25A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
GA10JT12-263 PDF online browsing
Datasheet PDF Download
GA10JT12-263.pdf
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
1955 pcs
Reference Price
USD 20.95/pcs
Our Price
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GA10JT12-263 Detailed Description

Part Number GA10JT12-263
Part Status Active
FET Type -
Technology SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss) 1200V
Current - Continuous Drain (Id) @ 25°C 25A (Tc)
Drive Voltage (Max Rds On,Min Rds On) -
Vgs(th) (Max) @ Id -
Gate Charge (Qg) (Max) @ Vgs -
Input Capacitance (Ciss) (Max) @ Vds 1403pF @ 800V
Vgs (Max) -
FET Feature -
Power Dissipation (Max) 170W (Tc)
Rds On (Max) @ Id, Vgs 120 mOhm @ 10A
Operating Temperature 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package -
Package / Case -
Weight -
Country of Origin -

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