GA100JT12-227 - GeneSiC Semiconductor

Part Number	GA100JT12-227
Part Status	Active
FET Type	-
Technology	SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)	1200V
Current - Continuous Drain (Id) @ 25°C	160A
Drive Voltage (Max Rds On,Min Rds On)	-
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	-
Input Capacitance (Ciss) (Max) @ Vds	14400pF @ 800V
Vgs (Max)	-
FET Feature	-
Power Dissipation (Max)	535W (Tc)
Rds On (Max) @ Id, Vgs	10 mOhm @ 100A
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Chassis Mount
Supplier Device Package	SOT-227
Package / Case	SOT-227-4, miniBLOC
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
GA100-001PD	TE Connectivity Measurement Specialties	SENSOR TRANSDUCER 0.5-4.5V PCB	Details
GA100-005WD	TE Connectivity Measurement Specialties	SENSOR PRESS GAUGE 5" H2O 3SIP	Details
GA100-010WD	TE Connectivity Measurement Specialties	SENSOR PRESS DIFF 10" H2O 3SIP	Details
GA100-015WD	TE Connectivity Measurement Specialties	SENSOR PRESS GAUGE 15" H2O 3SIP	Details
GA100JT12-227	GeneSiC Semiconductor	TRANS SJT 1200V 160A SOT227	Details
GA100JT17-227	GeneSiC Semiconductor	TRANS SJT 1700V 160A SOT227	Details
GA100K6A1A	TE Connectivity Measurement Specialties	NTC THERMISTOR 100K OHM BEAD	Details
GA100K6A1B	TE Connectivity Measurement Specialties	NTC THERMISTOR 100K OHM BEAD	Details
GA100K6A1IA	TE Connectivity Measurement Specialties	NTC THERMISTOR 100K OHM BEAD	Details
GA100K6MBD1	TE Connectivity Measurement Specialties	NTC THERMISTOR 100K OHM BEAD	Details