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Home › Product Categories › Integrated Circuits (ICs) › Memory › MB85R4M2TFN-G-ASE1
MB85R4M2TFN-G-ASE1

MB85R4M2TFN-G-ASE1 - Fujitsu Electronics America, Inc.

Part Number
MB85R4M2TFN-G-ASE1
Manufacturer
Fujitsu Electronics America, Inc.
Brief Description
IC FRAM 4MBIT 150NS 44TSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
MB85R4M2TFN-G-ASE1 PDF online browsing
Datasheet PDF Download
-
Category
Memory
Delivery Time
1 Day
Date Code
New
Stock Quantity
2085 pcs
Reference Price
USD 14.37/pcs
Our Price
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MB85R4M2TFN-G-ASE1 Detailed Description

Part Number MB85R4M2TFN-G-ASE1
Part Status Active
Memory Type Non-Volatile
Memory Format FRAM
Technology FRAM (Ferroelectric RAM)
Memory Size 4Mb (256K x 16)
Clock Frequency -
Write Cycle Time - Word, Page 150ns
Access Time 150ns
Memory Interface Parallel
Voltage - Supply 1.8 V ~ 3.6 V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package / Case 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package 44-TSOP
Weight -
Country of Origin -

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