EPC2110 Detailed Description
Part Number |
EPC2110 |
Part Status |
Active |
FET Type |
2 N-Channel (Dual) Common Source |
FET Feature |
GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss) |
120V |
Current - Continuous Drain (Id) @ 25°C |
3.4A |
Rds On (Max) @ Id, Vgs |
60 mOhm @ 4A, 5V |
Vgs(th) (Max) @ Id |
2.5V @ 700µA |
Gate Charge (Qg) (Max) @ Vgs |
0.8nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds |
80pF @ 60V |
Power - Max |
- |
Operating Temperature |
-40°C ~ 150°C (TJ) |
Mounting Type |
- |
Package / Case |
Die |
Supplier Device Package |
Die |
Weight |
- |
Country of Origin |
- |
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