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Home › Product Categories › Discrete Semiconductor › Transistors - FETs, MOSFETs - Arrays › EPC2110
EPC2110

EPC2110 - EPC

Part Number
EPC2110
Manufacturer
EPC
Brief Description
GANFET 2NCH 120V 3.4A DIE
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
EPC2110 PDF online browsing
Datasheet PDF Download
-
Category
Transistors - FETs, MOSFETs - Arrays
Delivery Time
1 Day
Date Code
New
Stock Quantity
161105 pcs
Reference Price
USD 1.022/pcs
Our Price
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EPC2110 Detailed Description

Part Number EPC2110
Part Status Active
FET Type 2 N-Channel (Dual) Common Source
FET Feature GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 120V
Current - Continuous Drain (Id) @ 25°C 3.4A
Rds On (Max) @ Id, Vgs 60 mOhm @ 4A, 5V
Vgs(th) (Max) @ Id 2.5V @ 700µA
Gate Charge (Qg) (Max) @ Vgs 0.8nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 80pF @ 60V
Power - Max -
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type -
Package / Case Die
Supplier Device Package Die
Weight -
Country of Origin -

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