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Home › Product Categories › Discrete Semiconductor › Transistors - FETs, MOSFETs - Arrays › EPC2103ENG
EPC2103ENG

EPC2103ENG - EPC

Part Number
EPC2103ENG
Manufacturer
EPC
Brief Description
TRANS GAN 2N-CH 80V BUMPED DIE
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
EPC2103ENG PDF online browsing
Datasheet PDF Download
-
Category
Transistors - FETs, MOSFETs - Arrays
Delivery Time
1 Day
Date Code
New
Stock Quantity
3809 pcs
Reference Price
USD 0/pcs
Our Price
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EPC2103ENG Detailed Description

Part Number EPC2103ENG
Part Status Active
FET Type 2 N-Channel (Half Bridge)
FET Feature GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 80V
Current - Continuous Drain (Id) @ 25°C 23A
Rds On (Max) @ Id, Vgs 5.5 mOhm @ 20A, 5V
Vgs(th) (Max) @ Id 2.5V @ 7mA
Gate Charge (Qg) (Max) @ Vgs 6.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 760pF @ 40V
Power - Max -
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case Die
Supplier Device Package Die
Weight -
Country of Origin -

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