EPC2010C - EPC

Part Number	EPC2010C
Part Status	Active
FET Type	N-Channel
Technology	GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25°C	22A (Ta)
Drive Voltage (Max Rds On,Min Rds On)	5V
Vgs(th) (Max) @ Id	2.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs	5.3nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds	540pF @ 100V
Vgs (Max)	+6V, -4V
FET Feature	-
Power Dissipation (Max)	-
Rds On (Max) @ Id, Vgs	25 mOhm @ 12A, 5V
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	Die Outline (7-Solder Bar)
Package / Case	Die
Weight	-
Country of Origin	-

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