EPC2022ENGRT - EPC

Part Number	EPC2022ENGRT
Part Status	Active
FET Type	N-Channel
Technology	GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	90A (Ta)
Drive Voltage (Max Rds On,Min Rds On)	5V
Vgs(th) (Max) @ Id	2.5V @ 12mA
Gate Charge (Qg) (Max) @ Vgs	13nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds	1400pF @ 50V
Vgs (Max)	+6V, -4V
FET Feature	-
Power Dissipation (Max)	-
Rds On (Max) @ Id, Vgs	3.2 mOhm @ 25A, 5V
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	Die
Package / Case	Die
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
EPC2001	EPC	TRANS GAN 100V 25A BUMPED DIE	Details
EPC2001C	EPC	TRANS GAN 100V 36A BUMPED DIE	Details
EPC2007	EPC	TRANS GAN 100V 6A BUMPED DIE	Details
EPC2007C	EPC	TRANS GAN 100V 6A BUMPED DIE	Details
EPC2010	EPC	TRANS GAN 200V 12A BUMPED DIE	Details
EPC2010C	EPC	TRANS GAN 200V 22A BUMPED DIE	Details
EPC2010CENGR	EPC	TRANS GAN 200V 22A BUMPED DIE	Details
EPC2012	EPC	TRANS GAN 200V 3A BUMPED DIE	Details
EPC2012C	EPC	TRANS GAN 200V 5A BUMPED DIE	Details
EPC2012CENGR	EPC	TRANS GAN 200V 5A BUMPED DIE	Details