DRDNB16W-7

DRDNB16W-7 - Diodes Incorporated

Part Number
DRDNB16W-7
Manufacturer
Diodes Incorporated
Brief Description
TRANS PREBIAS NPN/DIODE SOT363
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
DRDNB16W-7 PDF online browsing
Datasheet PDF Download
-
Category
Transistors - Bipolar (BJT) - Single, Pre-Biased
Delivery Time
1 Day
Date Code
New
Stock Quantity
52500 pcs
Reference Price
USD 0.1089/pcs
Our Price
Send by email: [email protected]

Please fill the below form to request a quotation for DRDNB16W-7

DRDNB16W-7 Detailed Description

Part Number DRDNB16W-7
Part Status Active
Transistor Type NPN - Pre-Biased + Diode
Current - Collector (Ic) (Max) 600mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) (Ohms) 1k
Resistor - Emitter Base (R2) (Ohms) 10k
DC Current Gain (hFE) (Min) @ Ic, Vce 56 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max) 500nA
Frequency - Transition 200MHz
Power - Max 200mW
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package SOT-363
Weight -
Country of Origin -

RELATED PRODUCTS FOR DRDNB16W-7