DMTH10H010LCT - Diodes Incorporated

Part Number	DMTH10H010LCT
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	108A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	53.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	2592pF @ 50V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	2.4W (Ta), 166W (Tc)
Rds On (Max) @ Id, Vgs	9.5 mOhm @ 13A, 10V
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220AB
Package / Case	TO-220-3
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
DMTH10H005LCT	Diodes Incorporated	MOSFET BVDSS: 61V 100V TO220AB	Details
DMTH10H005SCT	Diodes Incorporated	MOSFET N-CH 100V 140A TO220AB	Details
DMTH10H010LCT	Diodes Incorporated	MOSFET 100V 108A TO220AB	Details
DMTH10H010LCTB-13	Diodes Incorporated	MOSFET BVDSS: 61V 100V TO263 T&R	Details
DMTH10H010LPS-13	Diodes Incorporated	MOSFET BVDSS 61V-100V POWERDI50	Details
DMTH10H010SCT	Diodes Incorporated	MOSFET BVDSS 61V-100V TO220AB T	Details
DMTH10H010SPS-13	Diodes Incorporated	MOSFETN-CH 100VPOWERDI5060-8	Details
DMTH10H010SPSQ-13	Diodes Incorporated	MOSFET N-CHAN 61V 100V POWERDI50	Details
DMTH10H015LK3-13	Diodes Incorporated	MOSFET NCH 100V 52.5A TO252	Details
DMTH10H015LPS-13	Diodes Incorporated	MOSFET NCH 100V 7.3A POWERDI	Details