DMN2320UFB4-7B - Diodes Incorporated

Part Number	DMN2320UFB4-7B
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	1A (Ta)
Drive Voltage (Max Rds On,Min Rds On)	1.8V, 4.5V
Vgs(th) (Max) @ Id	950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	0.89nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	71pF @ 10V
Vgs (Max)	±8V
FET Feature	-
Power Dissipation (Max)	520mW (Ta)
Rds On (Max) @ Id, Vgs	320 mOhm @ 500mA, 4.5V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	X2-DFN1006-3
Package / Case	3-XFDFN
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
DMN2300U-7	Diodes Incorporated	MOSFET N-CH 20V 1.24A SOT23	Details
DMN2300UFB-7B	Diodes Incorporated	MOSFET N-CH 20V 1.32A 3DFN	Details
DMN2300UFB4-7B	Diodes Incorporated	MOSFET N-CH 20V 1.3A 3DFN	Details
DMN2300UFD-7	Diodes Incorporated	MOSFET N-CH 20V 1.73A 3UDFN	Details
DMN2300UFL4-7	Diodes Incorporated	MOSFET 2N-CH 20V 2.11A 6DFN	Details
DMN2320UFB4-7B	Diodes Incorporated	MOSFET N-CH 20V X2-DFN1006-3	Details