DMN10H099SFG-7

DMN10H099SFG-7 - Diodes Incorporated

Part Number
DMN10H099SFG-7
Manufacturer
Diodes Incorporated
Brief Description
MOSFET N-CH 100V 4.2A PWRDI3333
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
DMN10H099SFG-7 PDF online browsing
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Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
65000 pcs
Reference Price
USD 0.2751/pcs
Our Price
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DMN10H099SFG-7 Detailed Description

Part Number DMN10H099SFG-7
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 4.2A (Ta)
Drive Voltage (Max Rds On,Min Rds On) 6V, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 25.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1172pF @ 50V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 980mW (Ta)
Rds On (Max) @ Id, Vgs 80 mOhm @ 3.3A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerDI3333-8
Package / Case 8-PowerWDFN
Weight -
Country of Origin -

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