| Part Number | DMN10H099SFG-7 |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 4.2A (Ta) |
| Drive Voltage (Max Rds On,Min Rds On) | 6V, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 25.2nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1172pF @ 50V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 980mW (Ta) |
| Rds On (Max) @ Id, Vgs | 80 mOhm @ 3.3A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerDI3333-8 |
| Package / Case | 8-PowerWDFN |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
 |
DMN100 | DIODES | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Details |
|
DMN100-7 | DIODES | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Details |
 |
DMN100-7-F | Diodes Incorporated | MOSFET N-CH 30V 1.1A SC59-3 | Details |
 |
DMN1002UCA6-7 | Diodes Incorporated | MOSFETN-CHAN 12V X4-DSN3118-6 | Details |
 |
DMN1003UCA6-7 | Diodes Incorporated | MOSFET 2 N-CHANNEL X3-DSN3518-6 | Details |
 |
DMN1004UFDF-13 | Diodes Incorporated | MOSFET N-CH 12V 15A UDFN2020-6 | Details |
|
DMN1004UFDF-7 | Diodes Incorporated | MOSFET N-CH 12V 15A UDFN2020-6 | Details |
|
DMN1004UFV-13 | Diodes Incorporated | MOSFET BVDSS: 8V 24V POWERDI3333 | Details |
|
DMN1004UFV-7 | Diodes Incorporated | MOSFET BVDSS: 8V 24V POWERDI3333 | Details |
 |
DMN1006UCA6-7 | Diodes Incorporated | MOSFET 2 N-CHANNEL X3-DSN2718-6 | Details |
