CDBGBSC101200-G - Comchip Technology

Part Number	CDBGBSC101200-G
Part Status	Active
Diode Configuration	1 Pair Common Cathode
Diode Type	Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max)	1200V
Current - Average Rectified (Io) (per Diode)	18A (DC)
Voltage - Forward (Vf) (Max) @ If	1.7V @ 5A
Speed	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)	0ns
Current - Reverse Leakage @ Vr	100µA @ 1200V
Operating Temperature - Junction	-55°C ~ 175°C
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
CDBGBSC101200-G	Comchip Technology	DIODE DUAL SILICON CARBIDE POWER	Details
CDBGBSC201200-G	Comchip Technology	DIODE DUAL SILICON CARBIDE POWER	Details
CDBGBSC20650-G	Comchip Technology	DIODE DUAL SILICON CARBIDE POWER	Details