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Casa › Produttori › Toshiba Semiconductor and Storage
toshiba semiconductor & storage offers a broad range of enabling technology solutions that allow oems, odms, cms and fabless chip companies to develop advanced integrated products for the computing, networking, communications, digital consumer, automotive and other markets.
Dispositivi di protezione da sovratensioni, sovracorrenti, sovratemperature
Relè
Dispositivi a semiconduttore discreti
Sensori, Trasduttori
Circuiti integrati (CI)
RF/IF e RFID
Isolatori
Immagine Numero di parte Descrizione vista
1SS361FV,L3F 1SS361FV,L3F DIODE ARRAY GP 80V 100MA VESM Dettagli
1SS226,LF 1SS226,LF PB-F S-MINI M8 DIODE LF IFM3 Dettagli
1SV308,L3F 1SV308,L3F RF DIODE PIN 30V ESC Dettagli
1SV271TPH3F 1SV271TPH3F RF DIODE PIN 50V USC Dettagli
MT3S111P(TE12L,F) MT3S111P(TE12L,F) RF TRANS NPN 6V 8GHZ PW-MINI Dettagli
MT3S113TU,LF MT3S113TU,LF RF TRANS NPN 5.3V 11.2GHZ UFM Dettagli
MT3S113(TE85L,F) MT3S113(TE85L,F) RF TRANS NPN 5.3V 12.5GHZ SMINI Dettagli
MT3S113P(TE12L,F) MT3S113P(TE12L,F) RF TRANS NPN 5.3V 7.7GHZ PW-MINI Dettagli
MT3S111(TE85L,F) MT3S111(TE85L,F) RF TRANS NPN 6V 11.5GHZ SMINI Dettagli
1SV314(TPL3,F) 1SV314(TPL3,F) DIODE VARACTOR 10V SINGLE ESC Dettagli
1SV279,H3F 1SV279,H3F PB-F ESC VARICAP DIODE HF IR Dettagli
BAS516,L3F BAS516,L3F DIODE GEN PURP 100V 250MA ESC Dettagli
BAS316,H3F BAS316,H3F DIODE GEN PURP 100V 250MA USC Dettagli
BAS516,H3F BAS516,H3F DIODE GEN PURP 100V 250MA ESC Dettagli
CTS05F40,L3F CTS05F40,L3F DIODE SCHOTTKY 40V 500MA CST2 Dettagli
CUS05F40,H3F CUS05F40,H3F DIODE SCHOTTKY 40V 500MA USC Dettagli
CUS10F40,H3F CUS10F40,H3F DIODE SCHOTTKY 40V 1A USC Dettagli
CBS10F40,L3F CBS10F40,L3F DIODE SCHOTTKY 40V 1A CST2B Dettagli
JDH2S02SL,L3F JDH2S02SL,L3F X34 HIGH FREQUENCY SCHOTTKY BARR Dettagli
CMF04(TE12L,Q,M) CMF04(TE12L,Q,M) DIODE GEN PURP 800V 500MA MFLAT Dettagli
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