| Número de pieza | VS-GBPC2510W |
|---|---|
| Estado de la pieza | Active |
| Tipo de diodo | Single Phase |
| Tecnología | Standard |
| Voltaje - Pico Inverso (Máx) | 1000V |
| Corriente - promedio rectificado (Io) | 25A |
| Voltaje - Adelante (Vf) (Máx) @ Si | 1.1V @ 12.5A |
| Current - Reverse Leakage @ Vr | - |
| Temperatura de funcionamiento | -40°C ~ 150°C (TJ) |
| Tipo de montaje | Through Hole |
| Paquete / caja | 4-Square, GBPC-W |
| Paquete de dispositivo del proveedor | GBPC-W |
| Peso | - |
| País de origen | - |
| Imagen | Número de pieza | Fabricantes | Descripción | Ver |
|---|---|---|---|---|
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VS-GA100NA60UP | Vishay Semiconductor Diodes Division | IGBT 600V 100A 250W SOT-227 | Detalles |
|
VS-GA100TS120UPBF | Vishay Semiconductor Diodes Division | IGBT 1200V 182A 520W INT-A-PAK | Detalles |
|
VS-GA100TS60SF | Vishay Semiconductor Diodes Division | IGBT 600V 220A 780W | Detalles |
|
VS-GA100TS60SFPBF | Vishay Semiconductor Diodes Division | IGBT 600V 220A 780W INT-A-PAK | Detalles |
|
VS-GA200HS60S1 | Vishay Semiconductor Diodes Division | IGBT 600V 480A 830W | Detalles |
|
VS-GA200HS60S1PBF | Vishay Semiconductor Diodes Division | IGBT 600V 480A 830W INT-A-PAK | Detalles |
|
VS-GA200SA60SP | Vishay Semiconductor Diodes Division | MODULE IGBT SOT-227 | Detalles |
|
VS-GA200SA60UP | Vishay Semiconductor Diodes Division | IGBT 600V 200A 500W SOT-227 | Detalles |
|
VS-GA200TH60S | Vishay Semiconductor Diodes Division | IGBT 600V 260A 1042W INT-A-PAK | Detalles |
 |
VS-GA250SA60S | Vishay Semiconductor Diodes Division | IGBT 600V 400A SOT227 | Detalles |
