| Número de pieza | VS-GB15XP120KTPBF |
|---|---|
| Estado de la pieza | Active |
| Tipo de IGBT | NPT |
| Configuración | Three Phase Inverter |
| Voltaje: ruptura del emisor del colector (máximo) | 1200V |
| Current - Collector (Ic) (Max) | 30A |
| Potencia - Max | 187W |
| Vce (on) (Max) @ Vge, Ic | 3.66V @ 15V, 30A |
| Corriente - corte de colector (máximo) | 250µA |
| Capacitancia de entrada (Cies) @ Vce | 1.95nF @ 30V |
| Entrada | Standard |
| Termistor NTC | Yes |
| Temperatura de funcionamiento | -40°C ~ 150°C (TJ) |
| Tipo de montaje | Chassis Mount |
| Paquete / caja | 12-MTP Module |
| Paquete de dispositivo del proveedor | MTP |
| Peso | - |
| País de origen | - |
| Imagen | Número de pieza | Fabricantes | Descripción | Ver |
|---|---|---|---|---|
|
VS-GB100DA60UP | Vishay Semiconductor Diodes Division | MODULE IGBT SOT-227 | Detalles |
|
VS-GB100LH120N | Vishay Semiconductor Diodes Division | IGBT 1200V 200A 833W INT-A-PAK | Detalles |
|
VS-GB100LP120N | Vishay Semiconductor Diodes Division | IGBT 1200V 200A 658W INT-A-PAK | Detalles |
|
VS-GB100NH120N | Vishay Semiconductor Diodes Division | IGBT 1200V 200A 833W INT-A-PAK | Detalles |
|
VS-GB100TH120N | Vishay Semiconductor Diodes Division | IGBT 1200V 200A 833W INT-A-PAK | Detalles |
|
VS-GB100TH120U | Vishay Semiconductor Diodes Division | IGBT 1200V 200A 1136W INT-A-PAK | Detalles |
|
VS-GB100TP120N | Vishay Semiconductor Diodes Division | IGBT 1200V 200A 650W INT-A-PAK | Detalles |
|
VS-GB100TP120U | Vishay Semiconductor Diodes Division | IGBT 1200V 150A 735W INT-A-PAK | Detalles |
|
VS-GB100TS60NPBF | Vishay Semiconductor Diodes Division | IGBT 600V 108A 390W INT-A-PAK | Detalles |
|
VS-GB100YG120NT | Vishay Semiconductor Diodes Division | OUTPUT SW MODULES - ECONO IGBT | Detalles |
