| Número de pieza | ES2A-M3/5BT |
|---|---|
| Estado de la pieza | Active |
| Tipo de diodo | Standard |
| Voltaje - DC Reverse (Vr) (Max) | 50V |
| Corriente - promedio rectificado (Io) | 2A |
| Voltaje - Adelante (Vf) (Máx) @ Si | 900mV @ 2A |
| Velocidad | Fast Recovery =< 500ns, > 200mA (Io) |
| Tiempo de recuperación inversa (trr) | 30ns |
| Current - Reverse Leakage @ Vr | 10µA @ 50V |
| Capacitancia @ Vr, F | 18pF @ 4V, 1MHz |
| Tipo de montaje | Surface Mount |
| Paquete / caja | DO-214AA, SMB |
| Paquete de dispositivo del proveedor | DO-214AA (SMB) |
| Temperatura de funcionamiento - unión | -55°C ~ 150°C |
| Peso | - |
| País de origen | - |
| Imagen | Número de pieza | Fabricantes | Descripción | Ver |
|---|---|---|---|---|
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ES2A | Fairchild/ON Semiconductor | DIODE GEN PURP 50V 2A DO214AA | Detalles |
 |
ES2A M4G | Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 2A DO214AA | Detalles |
|
ES2A R5G | Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 2A DO214AA | Detalles |
 |
ES2A-13 | Diodes Incorporated | DIODE GEN PURP 50V 2A SMB | Detalles |
|
ES2A-13-F | Diodes Incorporated | DIODE GEN PURP 50V 2A SMB | Detalles |
|
ES2A-E3/52T | Vishay Semiconductor Diodes Division | DIODE GEN PURP 50V 2A DO214AA | Detalles |
|
ES2A-E3/5BT | Vishay Semiconductor Diodes Division | DIODE GEN PURP 50V 2A DO214AA | Detalles |
 |
ES2A-LTP | Micro Commercial Co | DIODE GEN PURP 50V 2A DO214AC | Detalles |
|
ES2A-M3/52T | Vishay Semiconductor Diodes Division | DIODE GEN PURP 50V 2A DO214AA | Detalles |
|
ES2A-M3/5BT | Vishay Semiconductor Diodes Division | DIODE GEN PURP 50V 2A DO214AA | Detalles |
