| Número de pieza | BAS20-E3-08 |
|---|---|
| Estado de la pieza | Active |
| Tipo de diodo | Standard |
| Voltaje - DC Reverse (Vr) (Max) | 150V |
| Corriente - promedio rectificado (Io) | 200mA |
| Voltaje - Adelante (Vf) (Máx) @ Si | 1.25V @ 200mA |
| Velocidad | Small Signal =< 200mA (Io), Any Speed |
| Tiempo de recuperación inversa (trr) | 50ns |
| Current - Reverse Leakage @ Vr | 100nA @ 150V |
| Capacitancia @ Vr, F | 5pF @ 0V, 1MHz |
| Tipo de montaje | Surface Mount |
| Paquete / caja | TO-236-3, SC-59, SOT-23-3 |
| Paquete de dispositivo del proveedor | SOT-23 |
| Temperatura de funcionamiento - unión | -55°C ~ 150°C |
| Peso | - |
| País de origen | - |
| Imagen | Número de pieza | Fabricantes | Descripción | Ver |
|---|---|---|---|---|
 |
BAS20 | Fairchild/ON Semiconductor | DIODE GP 200V 200MA SOT23-3 | Detalles |
 |
BAS20 RFG | Taiwan Semiconductor Corporation | DIODE GEN PURP 150V 200MA SOT23 | Detalles |
 |
BAS20,215 | Nexperia USA Inc. | DIODE GEN PURP 150V 200MA SOT23 | Detalles |
|
BAS20,235 | Nexperia USA Inc. | DIODE GEN PURP 150V 200MA SOT23 | Detalles |
 |
BAS20-7 | Diodes Incorporated | DIODE GP 150V 200MA SOT23-3 | Detalles |
 |
BAS20-7-99-F | DIODESINCORPORATED | BAS20-7-99-F DIODESINCORPORATED SOT 23 New Original Stocks | Detalles |
|
BAS20-7-F | Diodes Incorporated | DIODE GP 150V 200MA SOT23-3 | Detalles |
|
BAS20-E3-08 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 150V 200MA SOT23 | Detalles |
|
BAS20-E3-18 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 150V 200MA SOT23 | Detalles |
|
BAS20-G3-08 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 150V 200MA SOT23 | Detalles |
