| Número de pieza | 2SA965-Y(F,M) |
|---|---|
| Estado de la pieza | Last Time Buy |
| Tipo de transistor | PNP |
| Current - Collector (Ic) (Max) | 800mA |
| Voltaje: ruptura del emisor del colector (máximo) | 120V |
| Saturación de Vce (Máx) @ Ib, Ic | 1V @ 50mA, 500mA |
| Corriente - corte de colector (máximo) | 100nA (ICBO) |
| Ganancia de corriente CC (hFE) (Min) @ Ic, Vce | 80 @ 100mA, 5V |
| Potencia - Max | 900mW |
| Frecuencia - Transición | 120MHz |
| Temperatura de funcionamiento | 150°C (TJ) |
| Tipo de montaje | Through Hole |
| Paquete / caja | TO-226-3, TO-92-3 Long Body |
| Paquete de dispositivo del proveedor | LSTM |
| Peso | - |
| País de origen | - |
| Imagen | Número de pieza | Fabricantes | Descripción | Ver |
|---|---|---|---|---|
|
2SA965-O(TE6,F,M) | Toshiba Semiconductor and Storage | TRANS PNP 800MA 120V TO226-3 | Detalles |
|
2SA965-O,F(J | Toshiba Semiconductor and Storage | TRANS PNP 800MA 120V TO226-3 | Detalles |
|
2SA965-Y(F,M) | Toshiba Semiconductor and Storage | TRANS PNP 800MA 120V TO226-3 | Detalles |
|
2SA965-Y(T6CANO,FM | Toshiba Semiconductor and Storage | TRANS PNP 800MA 120V TO226-3 | Detalles |
|
2SA965-Y,F(J | Toshiba Semiconductor and Storage | TRANS PNP 800MA 120V TO226-3 | Detalles |
|
2SA965-Y,SWFF(M | Toshiba Semiconductor and Storage | TRANS PNP 800MA 120V TO226-3 | Detalles |
|
2SA965-Y,T6F(J | Toshiba Semiconductor and Storage | TRANS PNP 800MA 120V TO226-3 | Detalles |
|
2SA965-Y,T6KOJPF(J | Toshiba Semiconductor and Storage | TRANS PNP 800MA 120V TO226-3 | Detalles |
 |
2SA966 | TOS | 2SA966 TOS TO-92L New Original Stocks | Detalles |
|
2SA968 | EXSHINE | SILICON PNP EPITAXIAL TRANSISTOR PCT PROCESS | Detalles |
