| Número de pieza | APTM10AM02FG |
|---|---|
| Estado de la pieza | Active |
| Tipo de FET | 2 N-Channel (Half Bridge) |
| Característica FET | Standard |
| Drene a la fuente de voltaje (Vdss) | 100V |
| Corriente - Drenaje continuo (Id) a 25 ° C | 495A |
| Rds On (Max) @ Id, Vgs | 2.5 mOhm @ 200A, 10V |
| Vgs (th) (Max) @ Id | 4V @ 10mA |
| Carga de puerta (Qg) (Max) @ Vgs | 1360nC @ 10V |
| Capacitancia de entrada (Ciss) (Max) @ Vds | 40000pF @ 25V |
| Potencia - Max | 1250W |
| Temperatura de funcionamiento | -40°C ~ 150°C (TJ) |
| Tipo de montaje | Chassis Mount |
| Paquete / caja | SP6 |
| Paquete de dispositivo del proveedor | SP6 |
| Peso | - |
| País de origen | - |
| Imagen | Número de pieza | Fabricantes | Descripción | Ver |
|---|---|---|---|---|
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APTM100A12STG | Microsemi Corporation | MOSFET 2N-CH 1000V 68A LP8W | Detalles |
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APTM100A13DG | Microsemi Corporation | MOSFET 2N-CH 1000V 65A SP6 | Detalles |
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APTM100A13SCG | Microsemi Corporation | MOSFET 2N-CH 1000V 65A SP6 | Detalles |
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APTM100A13SG | Microsemi Corporation | MOSFET 2N-CH 1000V 65A SP6 | Detalles |
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APTM100A18FTG | Microsemi Corporation | MOSFET 2N-CH 1000V 43A SP4 | Detalles |
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APTM100A23SCTG | Microsemi Corporation | MOSFET 2N-CH 1000V 36A SP4 | Detalles |
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APTM100A23STG | Microsemi Corporation | MOSFET 2N-CH 1000V 36A SP4 | Detalles |
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APTM100A40FT1G | Microsemi Corporation | MOSFET 2N-CH 1000V 21A SP1 | Detalles |
