| Número de pieza | APTM100A23STG |
|---|---|
| Estado de la pieza | Active |
| Tipo de FET | 2 N-Channel (Half Bridge) |
| Característica FET | Standard |
| Drene a la fuente de voltaje (Vdss) | 1000V (1kV) |
| Corriente - Drenaje continuo (Id) a 25 ° C | 36A |
| Rds On (Max) @ Id, Vgs | 270 mOhm @ 18A, 10V |
| Vgs (th) (Max) @ Id | 5V @ 5mA |
| Carga de puerta (Qg) (Max) @ Vgs | 308nC @ 10V |
| Capacitancia de entrada (Ciss) (Max) @ Vds | 8700pF @ 25V |
| Potencia - Max | 694W |
| Temperatura de funcionamiento | -40°C ~ 150°C (TJ) |
| Tipo de montaje | Chassis Mount |
| Paquete / caja | SP4 |
| Paquete de dispositivo del proveedor | SP4 |
| Peso | - |
| País de origen | - |
| Imagen | Número de pieza | Fabricantes | Descripción | Ver |
|---|---|---|---|---|
|
APTM100A12STG | Microsemi Corporation | MOSFET 2N-CH 1000V 68A LP8W | Detalles |
|
APTM100A13DG | Microsemi Corporation | MOSFET 2N-CH 1000V 65A SP6 | Detalles |
 |
APTM100A13SCG | Microsemi Corporation | MOSFET 2N-CH 1000V 65A SP6 | Detalles |
 |
APTM100A13SG | Microsemi Corporation | MOSFET 2N-CH 1000V 65A SP6 | Detalles |
 |
APTM100A18FTG | Microsemi Corporation | MOSFET 2N-CH 1000V 43A SP4 | Detalles |
|
APTM100A23SCTG | Microsemi Corporation | MOSFET 2N-CH 1000V 36A SP4 | Detalles |
|
APTM100A23STG | Microsemi Corporation | MOSFET 2N-CH 1000V 36A SP4 | Detalles |
|
APTM100A40FT1G | Microsemi Corporation | MOSFET 2N-CH 1000V 21A SP1 | Detalles |
|
APTM100A46FT1G | Microsemi Corporation | MOSFET 2N-CH 1000V 19A SP1 | Detalles |
 |
APTM100AM90FG | Microsemi Corporation | MOSFET 2N-CH 1000V 78A SP6 | Detalles |
