| Número de pieza | APTDF200H100G |
|---|---|
| Estado de la pieza | Active |
| Tipo de diodo | Single Phase |
| Tecnología | Standard |
| Voltaje - Pico Inverso (Máx) | 1000V |
| Corriente - promedio rectificado (Io) | 255A |
| Voltaje - Adelante (Vf) (Máx) @ Si | 2.7V @ 200A |
| Current - Reverse Leakage @ Vr | 100µA @ 1000V |
| Temperatura de funcionamiento | -40°C ~ 175°C (TJ) |
| Tipo de montaje | Chassis Mount |
| Paquete / caja | SP6 |
| Paquete de dispositivo del proveedor | SP6 |
| Peso | - |
| País de origen | - |
| Imagen | Número de pieza | Fabricantes | Descripción | Ver |
|---|---|---|---|---|
|
APTDF100H100G | Microsemi Corporation | DIODE MODULE FULL BRIDGE SP4 | Detalles |
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APTDF100H1201G | Microsemi Corporation | DIODE MODULE FULL BRIDGE SP1 | Detalles |
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APTDF100H120G | Microsemi Corporation | DIODE MODULE FULL BRIDGE SP4 | Detalles |
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APTDF100H170G | Microsemi Corporation | DIODE MODULE FULL BRIDGE SP4 | Detalles |
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APTDF100H20G | Microsemi Corporation | DIODE MODULE FULL BRIDGE SP4 | Detalles |
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APTDF100H601G | Microsemi Corporation | DIODE MODULE FULL BRIDGE SP1 | Detalles |
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APTDF100H60G | Microsemi Corporation | DIODE MODULE FULL BRIDGE SP4 | Detalles |
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APTDF200H100G | Microsemi Corporation | DIODE MODULE FULL BRIDGE SP6 | Detalles |
|
APTDF200H120G | Microsemi Corporation | DIODE MODULE FULL BRIDGE SP6 | Detalles |
|
APTDF200H170G | Microsemi Corporation | DIODE MODULE FULL BRIDGE SP6 | Detalles |
