| Número de pieza | V10P25PL1T7 |
|---|---|
| Estado de la pieza | Active |
| Varistor Voltage (Min) | 35.1V |
| Varistor Voltage (Typ) | 39V |
| Varistor Voltage (Max) | 42.9V |
| Corriente - Surge | 2kA |
| Energía | 25J |
| Cantidad de circuitos | 1 |
| Voltios de CA máximos | 25VAC |
| Voltios de CC máximos | 31VDC |
| Capacitancia @ Frecuencia | 2900pF @ 1MHz |
| Temperatura de funcionamiento | -40°C ~ 125°C (TA) |
| Tipo de montaje | Through Hole |
| Paquete / caja | Disc 10mm |
| Peso | - |
| País de origen | - |
| Imagen | Número de pieza | Fabricantes | Descripción | Ver |
|---|---|---|---|---|
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V10P10 | VISHAY | High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier | Detalles |
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V10P10-E3/86A | Vishay Semiconductor Diodes Division | DIODE SCHOTTKY 100V 10A TO277A | Detalles |
|
V10P10-E3/87A | Vishay Semiconductor Diodes Division | DIODE SCHOTTKY 100V 10A TO277A | Detalles |
|
V10P10-M3/86A | Vishay Semiconductor Diodes Division | DIODE SCHOTTKY 100V 10A TO277A | Detalles |
|
V10P10-M3/87A | Vishay Semiconductor Diodes Division | DIODE SCHOTTKY 100V 10A TO277A | Detalles |
|
V10P10HE3/86A | Vishay Semiconductor Diodes Division | DIODE SCHOTTKY 100V 10A TO277A | Detalles |
|
V10P10HE3/87A | Vishay Semiconductor Diodes Division | DIODE SCHOTTKY 100V 10A TO277A | Detalles |
|
V10P10HM3/86A | Vishay Semiconductor Diodes Division | DIODE SCHOTTKY 100V 10A TO277A | Detalles |
|
V10P10HM3/87A | VISHAY | High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier | Detalles |
|
V10P10HM3_A/H | Vishay Semiconductor Diodes Division | DIODE GEN PURP 100V 10A TO277A | Detalles |
