| Número de pieza | MSRT20080(A)D |
|---|---|
| Estado de la pieza | Active |
| Configuración de Diodo | 1 Pair Series Connection |
| Tipo de diodo | Standard |
| Voltaje - DC Reverse (Vr) (Max) | 800V |
| Corriente - Rectificado promedio (Io) (por diodo) | 200A |
| Voltaje - Adelante (Vf) (Máx) @ Si | 1.1V @ 200A |
| Velocidad | Standard Recovery >500ns, > 200mA (Io) |
| Tiempo de recuperación inversa (trr) | - |
| Current - Reverse Leakage @ Vr | 10µA @ 800V |
| Temperatura de funcionamiento - unión | -55°C ~ 150°C |
| Tipo de montaje | Chassis Mount |
| Paquete / caja | Three Tower |
| Paquete de dispositivo del proveedor | Three Tower |
| Peso | - |
| País de origen | - |
| Imagen | Número de pieza | Fabricantes | Descripción | Ver |
|---|---|---|---|---|
|
MSRT200100(A) | GeneSiC Semiconductor | DIODE MODULE 1KV 200A 3TOWER | Detalles |
|
MSRT200100(A)D | GeneSiC Semiconductor | DIODE GEN 1KV 200A 3 TOWER | Detalles |
|
MSRT200120(A) | GeneSiC Semiconductor | DIODE MODULE 1.2KV 200A 3TOWER | Detalles |
|
MSRT200120(A)D | GeneSiC Semiconductor | DIODE GEN 1.2KV 200A 3 TOWER | Detalles |
|
MSRT200140(A) | GeneSiC Semiconductor | DIODE MODULE 1.4KV 200A 3TOWER | Detalles |
|
MSRT200140(A)D | GeneSiC Semiconductor | DIODE GEN 1.4KV 200A 3 TOWER | Detalles |
|
MSRT200160(A) | GeneSiC Semiconductor | DIODE MODULE 1.6KV 200A 3TOWER | Detalles |
|
MSRT200160(A)D | GeneSiC Semiconductor | DIODE GEN 1.6KV 200A 3 TOWER | Detalles |
|
MSRT20060(A) | GeneSiC Semiconductor | DIODE MODULE 600V 200A 3TOWER | Detalles |
|
MSRT20060(A)D | GeneSiC Semiconductor | DIODE GEN PURP 600V 200A 3 TOWER | Detalles |
