| Número de pieza | MBR200150CTR |
|---|---|
| Estado de la pieza | Active |
| Configuración de Diodo | 1 Pair Common Anode |
| Tipo de diodo | Schottky |
| Voltaje - DC Reverse (Vr) (Max) | 150V |
| Corriente - Rectificado promedio (Io) (por diodo) | 100A |
| Voltaje - Adelante (Vf) (Máx) @ Si | 880mV @ 100A |
| Velocidad | Fast Recovery =< 500ns, > 200mA (Io) |
| Tiempo de recuperación inversa (trr) | - |
| Current - Reverse Leakage @ Vr | 3mA @ 150V |
| Temperatura de funcionamiento - unión | -55°C ~ 150°C |
| Tipo de montaje | Chassis Mount |
| Paquete / caja | Twin Tower |
| Paquete de dispositivo del proveedor | Twin Tower |
| Peso | - |
| País de origen | - |
| Imagen | Número de pieza | Fabricantes | Descripción | Ver |
|---|---|---|---|---|
 |
MBR200100 | MCC | 200 Amp Rectifier 20 to 100 Volts Schottky Barrier | Detalles |
|
MBR200100CT | GeneSiC Semiconductor | DIODE MODULE 100V 200A 2TOWER | Detalles |
|
MBR200100CTR | GeneSiC Semiconductor | DIODE MODULE 100V 200A 2TOWER | Detalles |
 |
MBR200100CTS | GeneSiC Semiconductor | DIODE MODULE 100V 200A SOT227 | Detalles |
|
MBR200150CT | GeneSiC Semiconductor | DIODE SCHOTTKY 150V 100A 2 TOWER | Detalles |
|
MBR200150CTR | GeneSiC Semiconductor | DIODE SCHOTTKY 150V 100A 2 TOWER | Detalles |
|
MBR20020 | MCC | 200 Amp Rectifier 20 to 100 Volts Schottky Barrier | Detalles |
|
MBR200200CT | GeneSiC Semiconductor | DIODE SCHOTTKY 200V 100A 2 TOWER | Detalles |
|
MBR200200CTR | GeneSiC Semiconductor | DIODE SCHOTTKY 200V 100A 2 TOWER | Detalles |
|
MBR20020CT | GeneSiC Semiconductor | DIODE MODULE 20V 200A 2TOWER | Detalles |
