KBU3508-G - Comchip Technology

Número de pieza	KBU3508-G
Estado de la pieza	Active
Tipo de diodo	Single Phase
Tecnología	Standard
Voltaje - Pico Inverso (Máx)	800V
Corriente - promedio rectificado (Io)	4.2A
Voltaje - Adelante (Vf) (Máx) @ Si	1.1V @ 17.5A
Current - Reverse Leakage @ Vr	10µA @ 800V
Temperatura de funcionamiento	-55°C ~ 125°C (TJ)
Tipo de montaje	Through Hole
Paquete / caja	4-SIP, KBU
Paquete de dispositivo del proveedor	KBU
Peso	-
País de origen	-

Número de pieza	Fabricantes	Descripción	Ver
KBU10005	GeneSiC Semiconductor	DIODE BRIDGE 50V 10A KBU	Detalles
KBU10005-G	Comchip Technology	RECT BRIDGE CELL 50V 10A KBU	Detalles
KBU1001	GeneSiC Semiconductor	DIODE BRIDGE 100V 10A KBU	Detalles
KBU1001-G	Comchip Technology	RECTIFIER BRIDGE 10A 100V KBU	Detalles
KBU1001G	TSC	Single Phase 10 AMPS. Glass Passivated Bridge Rectifiers	Detalles
KBU1001G T0	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 50V 10A KBU	Detalles
KBU1001G T0G	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 50V 10A KBU	Detalles
KBU1001G_1	TSC	Single Phase 10 AMPS. Glass Passivated Bridge Rectifiers	Detalles
KBU1001_09	TSC	Single Phase 10.0 AMPS. Bridge Rectifiers	Detalles
KBU1001_1	TSC	Single Phase 10 AMPS. Silicon Bridge Rectifiers	Detalles